Fujitsu And MoSys Tie Technology License For 1T-SRAM-Q Embedded Memory; Highest Density Memory on Logic Process Targets Digital and Consumer Devices

TOKYO & SUNNYVALE, Calif.--(BUSINESS WIRE)--Jan. 26, 2004-- MoSys, Inc. (NASDAQ:MOSY) the industry's leading provider of high density system-on-chip (SoC) embedded memory solutions, and Fujitsu Limited (TSE:6702), a leading provider of customer-focused IT and communications solutions for the global marketplace, today announced an agreement under which MoSys' innovative quad density 1T-SRAM-Q(TM) technology is licensed to Fujitsu Limited for use on its 0.13-micron logic process. Fujitsu will use MoSys' 1T-SRAM-Q to provide high-density embedded memory solutions for its SoC designs in consumer applications, including digital cameras and video camcorders. Fujitsu ranks as the largest Japanese ASIC vendor, attributable to its successes in these markets.

"By leveraging the standard logic manufacturing process, MoSys 1T-SRAM-Q memory technology is ideal for use in ASIC development, as well as SoCs for processors and reconfigurable logic. We selected MoSys' memory technology over eDRAM because of the advantages in manufacturability, performance and cost structure," said Shigeru Fujii, corporate vice president and group executive vice president, LSI Group at Fujitsu Limited. "By partnering with MoSys we expect to offer leading-edge embedded memory solutions not only on our current 0.13-micron logic process, but also on our upcoming further advanced processes."

"By adopting a technology license for our 1T-SRAM-Q memory, Fujitsu can use its extensive experience in memory technology to provide optimized solutions for its own and its ASIC customers' designs," commented Mark-Eric Jones, vice president and general manager of Intellectual Property at MoSys, Inc. "MoSys is very pleased that Fujitsu has chosen 1T-SRAM-Q to satisfy its needs for high density embedded memory as memory continues to increase in importance within ASIC designs."

"We are very pleased to partner with Fujitsu to make our 1T-SRAM-Q memory technology available to a large number of customers through its strong sales, marketing and manufacturing capabilities," added Gerry Shimauchi, MoSys' Japan country manager.

ABOUT 1T-SRAM-Q

1T-SRAM-Q achieves its exceptional density by using bit cells of just 0.5 micron2 in the 0.13-micron logic process. Using only one additional, non-critical mask on the standard logic process, 1T-SRAM-Q enables cost-effective integration of large amounts of embedded memory on SoC designs without any change to the other logic IP blocks or libraries. 1T-SRAM-Q incorporates MoSys' proprietary Transparent Error Correction(TM) (TEC(TM)) technology delivering the additional benefits of improved yield and reliability with elimination of laser repair and soft error concerns.

ABOUT FUJITSU

Fujitsu is a leading provider of customer-focused IT and communications solutions for the global marketplace. Pace-setting technologies, highly reliable computing and telecommunications platforms, and a worldwide corps of systems and services experts uniquely position Fujitsu to deliver comprehensive solutions that open up infinite possibilities for its customers' success. Headquartered in Tokyo, Fujitsu Limited (TSE:6702) reported consolidated revenues of 4.6 trillion yen (US$38 billion) for the fiscal year ended March 31, 2003. For more information, please see: http://www.fujitsu.com/

ABOUT MOSYS

Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs, while using the same standard logic manufacturing processes.

1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' Web site at http://www.mosys.com.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.

SOURCE: MoSys, Inc.

"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Statements in this press release regarding MoSys, Inc.'s business which are not historical facts are "forward-looking statements" that involve risks and uncertainties. For a discussion of such risks and uncertainties, which could cause actual results to differ from those contained in the forward-looking statements, see "Risk Factors" in the Company's Annual Report or Form 10-K for the most recently ended fiscal year.