Design & Reuse
Partner Highlight
Date: August 12 | 10:00 am PT
Join our Synopsys webinar to see how atomistic simulations and GPU acceleration are transforming materials discovery, enabling faster, larger, and more accurate simulations.
Discover the future of materials engineering!

Register Now >>

Articles

Bridging Design Verification Gaps with Formal Verification
Karim Waseem, Si-vision
Post-Quantum Cryptography: Why Open Source alone is Not Enough for Secure IP Deployment
PQSecure Technologies
Dr. Reza Azarderakhsh
PQSecure Technologies
The Blind Spot of Semiconductor IP Sales
CoreHW
Petri Heliö, Principal IC Designer
CoreHW
SWE-Bench-C Evaluation Framework
Vayavya Labs
Vayavya Labs
Point of View: Key Recommendations for Enabling Predictive Maintenance at the Edge with AI in Industrial IoT
MosChip Technologies, USA
Nayan Goswami, Manager PES division
MosChip Technologies, USA
How Next-Gen Chips Are Unlocking RISC-V's Customization Advantage
Andes Technology Corp.
Marc Evans, Director of Business Development & Marketing
Andes Technology Corp.
Exploring the Latest Innovations in MIPI D-PHY and MIPI C-PHY
Mixel, Inc.
Michael Nagib, Mixel and Nuno Martins, Xpressphy
Mixel, Inc.
Why RPAs Fall Short in IIoT and How Agentic AI Fills the Gap
MosChip Technologies, USA
Rakesh Nakod
MosChip Technologies, USA
ComputeRAM in AI accelerators: An LLM case study
Synthara
Synthara
RISC-V source class riscv_asm_program_gen, the brain behind assembly instruction generator
By Mr. Shailesh Vasekar (Senior Consultant at VeriFast Technologies)
Transition Fixes in 3nm Multi-Voltage SoC Design
eInfochips, Inc.
Rahul Parmar and Mayursinh Vansadiya
eInfochips, Inc.
Breaking the Memory Bandwidth Boundary. GDDR7 IP Design Challenges & Solutions
Innosilicon Technology Ltd
Innosilicon Technology Ltd
Asic Technology
Select your target foundry and technology
FPGA and eFPGA Corner
Select your target vendor and device
Partner Highlight
• Ultra-Small Footprint (0.0166mm^2)
• Low Program Volt 1.6 V ± 5%
• Low Reead Current (0.1 mA)
• Low-Voltage Operation (0.59–0.715 V) on 0.8 V MOS Devices

Learn More >>