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Next Generation Flash device enabling small size, low power and direct connection with digital circuit which opens up new possibiities
LEE Flash G2 (G2) is an innovative Flash IP offering unique features that no other Flash IP could offer.
It is based on LEE Flash G1, which consists of simple SONOS memory cell, sandwiched by switch transistors on the side.
While maintaining the additional cost at minimum, it requires no high voltage for read operation, no isolation area in-between Memory cells and logic circuits, therefore super low power and easy to layout.
G2’s very special VDD operation architecture enables seamless connection of G2 Flash cell to standard logic circuit. Chip designer now can use non-volatize logic circuit, such as SRAM and open up new possibilities for innovation.
It is cost effective Flash solution for larger memory capacity requirement up to several Mega Bytes.
It also allows user to use standard CMOS process platform as is, utilizing existing PDK and Spice model because the implementation of G2 into the platform does not change any characteristics and geometries of it.
It is based on LEE Flash G1, which consists of simple SONOS memory cell, sandwiched by switch transistors on the side.
While maintaining the additional cost at minimum, it requires no high voltage for read operation, no isolation area in-between Memory cells and logic circuits, therefore super low power and easy to layout.
G2’s very special VDD operation architecture enables seamless connection of G2 Flash cell to standard logic circuit. Chip designer now can use non-volatize logic circuit, such as SRAM and open up new possibilities for innovation.
It is cost effective Flash solution for larger memory capacity requirement up to several Mega Bytes.
It also allows user to use standard CMOS process platform as is, utilizing existing PDK and Spice model because the implementation of G2 into the platform does not change any characteristics and geometries of it.
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